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| 2SK2611 Silicon N-Channel MOSFET Features 11A,500V,RDS(on)(Max0.55)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology. this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID Continuous Drain Current(@Tc=100) IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25) Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) 7 44 30 670 19.5 4.5 195 -55~150 300 A A V mJ mJ V/ ns W Drain Source Voltage Continuous Drain Current(@Tc=25) Parameter Value 500 11 Units V A Thermal Characteristics Symbol RQJC RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Junction-to -Ambient Value Min - Typ - Max 0.64 62.5 Units /W /W Rev.A Aug.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved. 2SK2611 Electrical Characteristics(Tc=25) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=30V,VDS=0V IG=10 A,VDS=0V VDS=500V,VGS=0V Min 30 500 2 - Type 0.48 15 1515 25 185 70 24 75 120 43 8 19 Max 100 10 Unit nA V Drain cut -off current IDSS VDS=400V,Tc=125 100 4 0.55 2055 30 235 150 57 A Drain -source breakdown voltage Gate threshold voltage Drain -source ON resistance Forward Transconductance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge(gate-source V(BR)DSS VGS(th) RDS(ON) gfs Ciss Crss Coss tr ton tf toff ID=10 mA,VGS=0V VDS=VGS,ID=250A VGS=10V,ID=5.5A VDS=40V,ID=5.5A VDS=25V, VGS=0V, f=1MHz VDD=250V, ID=11A RG=25 (Note4,5) VDS=400V, V V S pF ns 160 250 55 nC - - Qg plus gate-drain) Gate-source charge Gate-drain("miller") Charge Qgs Qgd VGS=10V, ID=11A (Note4,5) - Source-Drain Ratings and Characteristics(Ta=25) Characteristics Continuous drain reverse current Pulse drain reverse current Forward voltage(diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR=11A,VGS=0V IDR=11A,VGS=0V, dIDR / dt =100 A / s Min - Type 90 1.5 Max 11 44 1.4 - Unit A A V ns C Note 1.Repeativity rating :pulse width limited by junction temperature 2.L=10mH IAS=11A,VDD=50V,R G=25,Starting TJ=25 3.ISD11A,di/dt200A/us,VDD Steady, all for your advance 2SK2611 Fig.1 On State Characteristics Fig.2 Transfer Current Characteristics Fig.3 On-Resistance Variation vs Drain Current Fig.4 Body Diode Forward Voltage Variation with Source Current and Temperature Fig.5 Capacitance Characteristics Fig.6 Gate Charge Characteristics 3/7 Steady, all for your advance 2SK2611 Fig.7 Breakdown Voltage Variation Fig.8 On-Resistance Variation vs.Temperature Fig.9 Maximum Safe Operation Area Fig.10 Maximum Drain Current vs Case Temperature Fig.11Transient Thermal Response Curve 4/7 Steady, all for your advance 2SK2611 Fig.12Gate Test Circuit & Waveform Fig.13 Resistive Switching Test Circuit & Waveform Fig.14Unclamped Inductive Switching Test Circuit & Waveform 5/7 Steady, all for your advance 2SK2611 Fig.15 Peak Diode Recovery dv/dt Test Circuit & Waveform 6/7 Steady, all for your advance 2SK2611 TO-3P Package Dimension TO-3P Unit:mm 7/7 Steady, all for your advance |
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